AP10TN135H advanced power n-channel enhancement mode electronics corp. power mosfet 100% r g & uis test bv dss 100v simple drive requirement r ds(on) 135m fast switching characteristic i d 8.1a rohs compliant & halogen-free description absolute maximum ratings@ t j =25 o c(unless otherwise specified) symbol units v ds v v gs v i d @t c =25 a i d @t c =100 a i dm a p d @t c =25 w p d @t a =25 w e as single pulse avalanche energy 4 mj t stg t j symbol value units rthj-c maximum thermal resistance, junction-case 6 /w rthj-a 62.5 /w halogen-free product 8 parameter rating drain-source voltage 100 gate-source voltage + 20 drain current, v gs @ 10v 8.1 storage temperature range drain current, v gs @ 10v 5.1 pulsed drain current 1 28 total power dissipation 20.8 -55 to 150 total power dissipation 3 2 operating junction temperature range -55 to 150 201701121 thermal data parameter 1 maximum thermal resistance, junction-ambient (pcb mount) 3 g d s g d s to-252(h) a p10tn135 series are from advanced power innovated design and silicon process technology to achieve the lowest possible on- resistance and fast switching performance. it provides the designe r with an extreme efficient device for use in a wide range of powe r applications. the to-252 package is widely preferred for all commercial-industrial surface mount applications using infrared reflow technique and suited for high current application due to the low connection resistance. .
electrical characteristics@t j =25 o c(unless otherwise specified) symbol parameter test conditions min. typ. max. units bv dss drain-source breakdown voltage v gs =0v, i d =250ua 100 - - v r ds(on) static drain-source on-resistance 2 v gs =10v, i d =5a - - 135 m v gs =4.5v, i d =3a - - 145 m v gs(th) gate threshold voltage v ds =v gs , i d =250ua 1 - 3 v g fs forward transconductance v ds =10v, i d =5a - 17 - s i dss drain-source leakage current v ds =80v, v gs =0v - - 25 ua i gss gate-source leakage v gs = + 20v, v ds =0v - - + 100 na q g total gate charge i d =5a - 11 17.6 nc q gs gate-source charge v ds =80v - 2 - nc q gd gate-drain ("miller") charge v gs =10v - 2 - nc t d(on) turn-on delay time v ds =50v - 6 - ns t r rise time i d =5a - 8 - ns t d(off) turn-off delay time r g =3.3 -14- ns t f fall time v gs =10v - 3 - ns c iss input capacitance v gs =0v - 580 928 pf c oss output capacitance v ds =50v - 27 - pf c rss reverse transfer capacitance f=1.0mhz - 19 - pf r g gate resistance f=1.0mhz - 2 4 source-drain diode symbol parameter test conditions min. typ. max. units v sd forward on voltage 2 i s =5a, v gs =0v - - 1.3 v t rr reverse recovery time i s =5a, v gs =0 v , - 20 - ns q rr reverse recovery charge di/dt=100a/s - 18 - nc notes: 1.pulse width limited by max. junction temperature. 2.pulse test 3.surface mounted on 1 in 2 copper pad of fr4 board 4.starting t j =25 o c , v dd =50v , l=1mh , r g =25 this product is sensitive to electrostatic discharge, please handle with caution. use of this product as a critical component in life support or other similar systems is not authorized. apec does not assume any liability arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights, nor the rights of others. apec reserves the right to make changes without further notice to any products herein to improve reliability, function or design. 2 AP10TN135H .
AP10TN135H fig 1. typical output characteristics fig 2. typical output characteristics fig 3. on-resistance v.s. gate voltage fig 4. normalized on-resistance v.s. junction temperature fig 5. forward characteristic of fig 6. gate threshold voltage v.s. reverse diode junction temperature 3 0 4 8 12 16 20 0 4 8 12 16 20 v ds , drain-to-source voltage (v) i d , drain current (a) t c =25 o c 10v 7.0v 6.0v 5.0v v g = 4.0v 0 2 4 6 8 10 12 024681012 v ds , drain-to-source voltage (v) i d , drain current (a) 10v 7.0v 6.0v 5.0v v g = 4.0v t c = 150 o c 0.0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 -100 -50 0 50 100 150 t j , junction temperature ( o c) normalized r ds(on) i d =5a v gs =10v 0 1 2 3 0 0.2 0.4 0.6 0.8 1 1.2 v sd , source-to-drain voltage (v) i s (a) t j =25 o c t j =150 o c 0 0.4 0.8 1.2 1.6 -100 -50 0 50 100 150 t j ,junction temperature ( o c) normalized v gs(th) i d =1ma 95 99 103 107 111 115 246810 v gs gate-to-source voltage (v) r ds(on) (m ) i d =3a t c =25 o c .
AP10TN135H fig 7. gate charge characteristics fig 8. typical capacitance characteristics fig 9. maximum safe operating area fig 10. effective transient thermal impedance fig 11. switching time waveform fig 12. gate charge waveform 4 0 2 4 6 8 10 12 0 4 8 12 16 q g , total gate charge (nc) v gs , gate to source voltage (v) i d =5a v ds =50v q v g 10v q gs q gd q g charge 0 200 400 600 800 1000 0 20 40 60 80 100 120 v ds ,drain-to-source voltage (v) c (pf) f =1.0mh z c iss c oss c rss 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 t , pulse width (s) normalized thermal response (r thjc ) p dm duty factor = t/t peak t j = p dm x r thjc + t c t t 0.02 0.01 0.05 0.1 0.2 duty factor=0.5 single pulse 0.01 0.1 1 10 100 0.1 1 10 100 1000 v ds , drain-to-source voltage (v) i d (a) t c =25 o c s ingle pulse 10us 100us 1ms 10ms dc operation in this area limited by r ds(on) t d(on) t r t d(off) t f v ds v gs 10% 90% .
AP10TN135H fig 13. typ. drain-source on state fig 14. total power dissipation resistance fig 15. normalized bv dss v.s. junction 5 0 100 200 300 400 500 024681012 i d , drain current (a) r ds(on) (m ) t j =25 o c 4.5v v gs =10v 0 4 8 12 16 20 24 0 50 100 150 t c , case temperature( o c) p d , power dissipation(w) 0 0.4 0.8 1.2 1.6 2 -100 -50 0 50 100 150 t j , junction temperature ( o c) normalized bv dss i d =1ma .
marking information AP10TN135H 6 part numbe r date code (ywwsss) y last digit of the year ww week sss sequence 10tn135 ywwsss .
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